Goldman Sachs Reports China's DRAM Capacity to Double by 2030, Targeting HBM3/3E

Local DRAM industry leaders in China expect annual capacity to more than double by 2030, with expansions in Hefei, Shanghai, and Beijing fully operational by 2028, supplemented by a mega site beyond 2028. New DRAM capacity utilizes both global-tier and local semiconductor production equipment, with local suppliers actively upgrading processes and targeting HBM3 and HBM3E production in 2026.